Defects in high-mobility semiconductor systems
Abstract
Initial work under subject contract was devoted to (a) assembling and calibrating essential electrical, optical, and spectroscopic measurement facilities needed for analysis of defects in high-mobility structures; (b) application of such measurement systems to study of basic defects in previously characterized materials, in order to validate techniques and also to verify and extend our understanding of the physics of such basic defects; and (c) initiation of fabrication of critical test samples comprising heterostructures and superlattices of GaAs and Si and Ge.
- Publication:
-
Interim Report No. 1 Lund Univ. (Sweden). Dept. of Solid State Physics
- Pub Date:
- October 1987
- Bibcode:
- 1987lund.reptQ....G
- Keywords:
-
- Crystal Defects;
- Electron Mobility;
- Gallium Arsenides;
- Germanium;
- Silicon;
- Superlattices;
- Crystal Structure;
- Spectroscopy;
- Solid-State Physics