Development of improved p-type silicon-germanium alloys
Abstract
Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.
- Publication:
-
IECEC 1987; Proceedings of the Twenty-second Intersociety Energy Conversion Engineering Conference
- Pub Date:
- 1987
- Bibcode:
- 1987iece.conf.1978M
- Keywords:
-
- Annealing;
- P-Type Semiconductors;
- Silicon Alloys;
- Thermoelectricity;
- Boron Phosphides;
- Gallium Antimonides;
- Germanium Alloys;
- Temperature Dependence;
- Solid-State Physics