Effect of the band-gap characteristics on laser-induced dry etching of semiconductors
Abstract
The carrier-driven photochemical dry etching of both direct- and indirect-gap semiconductors depends strongly on the depth of generation of free carriers and the recombination behavior of those carriers. While excitation across the lowest energy gap, E sub 0, of a direct semiconductor produces many near-surface carriers to drive etching, too few carriers may be generated near the surface by excitation across E sub 0 of an indirect semiconductor for etching to occur. However, excitation across the direct E sub 1 gap of an indirect semiconductor produces sufficient near-surface carriers for rapid etching. Enhanced bulk carrier recombination in very heavily doped materials can suppress etching in both direct and indirect semiconductors. This paper studied GaAs(sub 1-x)P.
- Publication:
-
Presented at the 172nd Meeting of the Electrochemical Society
- Pub Date:
- 1987
- Bibcode:
- 1987ecs..meet.....A
- Keywords:
-
- Drying;
- Energy Gaps (Solid State);
- Etching;
- Laser Outputs;
- Photochemical Reactions;
- Semiconductors (Materials);
- Charge Carriers;
- Chlorine;
- Electrical Properties;
- Electromagnetic Absorption;
- Excitation;
- Gallium Arsenides;
- Gallium Phosphides;
- Solid-State Physics