Beam assisted fabrication of 3-5/Si monolithic devices
Abstract
The objective of this research project is to explore two new methods for deposition of 3-5 semiconducting films on silicon substrates. Using gas-source molecular beam epitaxy (MBE) and photon-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), Gallium Arsenide and other 3-5 films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical characterization the suitability of the resulting 3-5/Si structures are being examined for use in monolithic devices.
- Publication:
-
Annual Report
- Pub Date:
- September 1987
- Bibcode:
- 1987csu..reptR....R
- Keywords:
-
- Fabrication;
- Integrated Circuits;
- Molecular Beam Epitaxy;
- Semiconducting Films;
- Vapor Deposition;
- Gallium Arsenides;
- Microelectronics;
- Silicon Films;
- Substrates;
- Solid-State Physics