Laser measurements of state-resolved Ga and in atom sticking and desorption on metal and semiconductor surfaces

Work is carried out on the dynamics of Ga and As scattering, sticking, and desorption from silicon single crystals using laser probing of the Ga and As (dimer) gas phase species. In the last six months, results have been obtained for the binding energy of Ga on silicon. Structural patterns of Ga on silicon at various coverages have been determined by LEED studies. Results have been obtained for the desorption of two different Ga spin-orbit states and a model developed to explain the observed behavior. The desorption pre-exponential factors suggest a one-dimensional mobility of Ga on silicon. These results are relevant to the epitaxial growth of GaAs on silicon.