Automatic prober for the dc characterization of gallium arsenide devices. Part 1: The measurement facility

A computer controlled auto prober system was constructed to allow detailed information to be obtained from a large number of GaAs devices. The prober system consists of two separate facilities, one to carry out the dc measurements and the other to allow the data obtained to be analyzed and correlated. Both facilities were designed as an integrated system and offer a range of on-wafer measurements which include characterization of active devices such as GaAs MESFETs and Schottky diodes as well as measurement routines for use on various test patterns for assessing ohmic contacts and investigating doping profiles of device layers. Passive components such as on-wafer capacitors and resistors can be measured. The system is designed for nonexpert use.