Photoconductivity and photoluminescence of GaAs:Cr with an anisotropically etched surface microrelief
Abstract
The effect of the morphological features of anisotropically etched GaAs:Cr surfaces on the photoconductivity and photoluminescence spectra is investigated experimentally. It is shown, in particular, that the photoconductivity spectra of GaAs:Cr with an anisotropically etched microrelief are similar to those of multilayer multicomponent structures (superlattices) on semiinsulating GaAs substrates. Anisotropic etching also increases the intensity of photoluminescence and produces a new radiation band in the region 0.92-0.95 eV. The results obtained are interpreted on the basis of a model with inhomogeneous geometry and physicochemical properties.
- Publication:
-
Ukrainskii Fizicheskii Zhurnal
- Pub Date:
- July 1987
- Bibcode:
- 1987UkFiZ..32.1110G
- Keywords:
-
- Chromium;
- Etching;
- Gallium Arsenides;
- Microstructure;
- Photoconductivity;
- Photoluminescence;
- Surface Roughness Effects;
- Anisotropic Media;
- Chemical Properties;
- Electro-Optics;
- Mathematical Models;
- Physical Properties;
- Specimen Geometry;
- Solid-State Physics