Preliminary thermal analysis of transistor packages
Abstract
Efficient thermal design of microwave power transistors is critical for realizing reliable operation of high-power modern electronic circuitry. In an effort to improve thermal performance and enhance reliability, a systematic study is made to quantify transistor package thermal behavior. A series of two-dimensional finite element thermal analyses was completed of a transistor side view. These analyses provide trends for the temperature field and internal thermal resistance components as functions of material properties and geometry. Results from the analyses are shown as isothermal contour plots, plots of temperature drop across the flange and carrier, and plots of temperature versus time.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- April 1987
- Bibcode:
- 1987STIN...8723898R
- Keywords:
-
- Finite Element Method;
- Heat Transfer;
- Mathematical Models;
- Microwave Amplifiers;
- Semiconductor Devices;
- Silicon Transistors;
- Thermal Analysis;
- Thermal Resistance;
- Beryllium Oxides;
- Copper;
- Diamonds;
- Gold;
- Graphite;
- Temperature Measurement;
- Tungsten;
- Electronics and Electrical Engineering