Electron interference effects in quantum wells: Observation of bound and resonant states
Abstract
Quasimonoenergetic ballistic electrons were injected into GaAs potential wells of various thicknesses (2972 nm). Strong modulation in the injected currents, as a function of the injection energy, was observed and correlated with electron coherence effects. A selfconsistent solution of Poisson and Schrödinger equations was needed to relate these effects to the bound and, in particular, resonant quantum states in the well. The good match with theory justified the use (and led to an expression) of the electron ``energy effective mass'' in the central valley, in an energy range where nonparabolicity and valley transfer are significant and make this determination, usually, difficult.
 Publication:

Physical Review Letters
 Pub Date:
 February 1987
 DOI:
 10.1103/PhysRevLett.58.816
 Bibcode:
 1987PhRvL..58..816H
 Keywords:

 Carrier Injection;
 Electron Diffusion;
 Electron Energy;
 Electron Tunneling;
 Gallium Arsenides;
 Quantum Wells;
 Doped Crystals;
 Electron Scattering;
 Heterojunctions;
 Poisson Equation;
 Potential Energy;
 Schroedinger Equation;
 SolidState Physics;
 71.25.Jd;
 71.50.+t;
 73.40.Gk;
 Tunneling