Structural, Thermal, and Electrical Characterization of Ion Beam and Plasma Etched Monocrystalline Silicon.

The surface of monocrystalline silicon was modified by ion beam or plasma etching using both reactive and non -reactive gases. Physical characterization of the crystal lattice damage and of the chemical impurities left on the surface as a result of these treatments was accomplished using a diversified arsenal of analytical techniques; namely, ellipsometry, RBS, XPS, AES, XFS, SEM, XTEM. Annealing properties of the samples were studied and changes in the etch-induced structure were characterized. The oxidation kinetics were also studied and the results explained in light of the annealing properties and of the impurities introduced by the etching treatments. Finally, metal-oxide -semiconductor capacitors were made from the etched samples and the electrical properties of the oxide and interface were measured and correlated with the surface modifications. Some initial attempts were made to restore desirable electrical properties to etched samples.