We review the experimental work on ion implantation with respect to superconductivity and electrical resistivity of metal-semiconductor alloys carried out at the Institute of Physics of Academia Sinica. Samples studied included liquid-quenched AlSiGe ribbons and Al thin films. The liquid-quenched ribbons with a superconducting transition temperature Tc of 3.2 K were implanted with H or H 2 ions at room temperature and a decrease of Tc was observed. The ribbons were also implanted with Si ions at liquid nitrogen temperature, resulting in a higher onset of transition at about 4 K. We also implanted Si ions into Al thin films at room temperature up to 5 at.% Si. The Tc of the films increased from 1.5 to 1.9 K and the temperature-dependence of resistivity was changed from T5 to a T3-dependence within 30-50 K. The superconductivity of Al-semiconductor alloys was proved to be strongly influenced by the disorder, which depends crucially on the implantation temperature.