Metal Schottky Barriers on Hydrogenated Amorphous Ge/Si Superlattices
Abstract
The barrier heights and junction properties of Pt Schottky barriers on hydrogenated amorphous Ge/Si superlattices have been characterized for films with individual layer thickness from ∼5 to 30 Å. The electronic properties of these junctions, which allow efficient extraction of photogenerated carriers, are explained in terms of the quantum shifts in the conduction band and the densities of gap states in the Ge layers.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- February 1987
- DOI:
- 10.1143/JJAP.26.L105
- Bibcode:
- 1987JaJAP..26L.105W
- Keywords:
-
- Amorphous Semiconductors;
- Germanium;
- Schottky Diodes;
- Silicon;
- Superlattices;
- Electric Potential;
- Film Thickness;
- Hydrogenation;
- Open Circuit Voltage;
- Short Circuit Currents;
- Electronics and Electrical Engineering