Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering

The effect of oxygen-doping on the electron transport in sputtered hydrogenated amorphous silicon has been studied by means of a time-of-flight technique. Incorporation of a slight amount of oxygen enhances both the mobility and the mobility-lifetime product. An electron drift mobility as high as 8× 10^-2cm²/V\cdots at room temperature with a non-dispersive character is observed. The enhancement of the electron mobility and the non-dispersive electron transport in slightly oxygen-doped films are discussed on the basis of two-fold coordinated oxygen atoms and oxygen-related donors.