Control of dislocations in GaAs grown on Si(211) by molecular beam epitaxy
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- July 1987
- DOI:
- 10.1116/1.583703
- Bibcode:
- 1987JVSTB...5.1156A