Characterization of ultrathin SiO2 films formed by direct low-energy ion-beam oxidation
Abstract
Bombardment of silicon (100) surfaces at room temperature by an oxygen-containing low-energy ion beam is studied as an alternative to thermal oxidation to produce ultrathin oxide films. A self-limiting oxide thickness of about 50 Å is obtained by using ions with energy 100 eV or lower. Auger electron spectroscopy depth profiles of an ion-beam grown oxide and a thermally grown oxide show very similar composition. Grazing angle x-ray photoelectron spectroscopy indicates the presence of lower oxides of silicon near the surface. The capacitance-voltage characteristics of ion-beam grown oxides compare favorably with those of thermally grown oxides.
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- July 1987
- DOI:
- 10.1116/1.574566
- Bibcode:
- 1987JVSTA...5.1569Y