The electrical properties of La 2NiO 4 have been studied with respect to the stoichiometry of the material. The conductivity of reduced compositions has been measured between 20 and 1000 K and compared to that of the air-prepared ones. Nonstoichiometry is present in both cases and produces disorder leading to Anderson localization and to the definition of a mobility edge in the σx2- y2 itinerant band. Air-prepared compounds contain in addition a large number of Ni 3+ states which may overlap the itinerant σx2- y2 band. For reduced materials containing small amounts of Ni 3+, the electrical properties can be described below 200 K by a hopping conductivity at the Fermi level within a sharply peaked density of states. The results are well described within the frame of the Mott theory of variable range hopping. Above 200 K highly reduced materials exhibit direct excitation of holes from Ni 3+ states to the mobility edge in the itinerant band. Under conditions appropriate to air-prepared materials, the Fermi level is shifted toward the itinerant band and a major contribution to the conductivity arises from hopping at the Fermi level. At high temperature a progressive excitation of carriers from the localized states is anticipated with an eventual exhaustion region. This last assumption is corroborated with a shift of the conductivity maximum to higher temperature for increasingly reduced materials.