American Crystal Growth 1987; Proceedings of the Seventh Conference, Monterey, CA, July 12-17, 1987
Abstract
Theoretical and practical aspects of crystal growth are examined in reviews and reports. Topics addressed include growth theory and modeling, bulk growth of Si and GaAs, vapor-phase epitaxy, superlattices, solution growth, optical materials, and characterization. Consideration is given to the evolution and modeling of the Czochralski technique, free surfaces and multilayer interfaces in the GaAs/AlAs system, computer simulation of ledge formation and ledge interaction for the Si (111) free surface, numerical analysis of O transport in magnetic Czochralski growth of Si, and facilitation of the growth of protein crystals by heterogeneous epitaxial nucleation.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- November 1987
- Bibcode:
- 1987JCrGr..85.....S
- Keywords:
-
- Conferences;
- Crystal Growth;
- Aluminum Arsenides;
- Computerized Simulation;
- Gallium Arsenides;
- Indium Phosphides;
- Mass Spectroscopy;
- Optical Materials;
- Protein Crystal Growth;
- Proteins;
- Silicon;
- Solid-State Physics