Measurement of low-energy X-ray dose enhancement in MOS devices with metal silicide gates
Abstract
A photocurrent technique was used to accurately measure dose enhancement in the gate oxide of MOS devices with tungsten or titanium silicide over various thicknesses of poly-Si exposed to low-energy X-irradiation. The results show that the dose enhancement is strongly dependent on the type of metal/silicide used and the thickness of the poly-Si layer between the metal/silicide and the SiO2 gate insulator. A straightforward procedure for calculating the equal damage dose equivalence for metal/silicide over poly-Si gate MOS structures is presented.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1987
- DOI:
- 10.1109/TNS.1987.4337512
- Bibcode:
- 1987ITNS...34.1540B
- Keywords:
-
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Radiation Dosage;
- X Ray Irradiation;
- Photoelectricity;
- Silicides;
- Titanium Compounds;
- Tungsten Compounds;
- Very Large Scale Integration;
- Vhsic (Circuits);
- Electronics and Electrical Engineering