Analysis of long-term frequency drift in FET oscillators
Abstract
The long-term frequency drift observed in 11-GHz GaAs FET dielectric resonator oscillators is analyzed. The analysis is based on device modeling. It is found that the dominant contributor to the long-term frequency drift is the gate-to-source channel capacitance of the GaAs FET. Results agree with the trends observed on dielectric resonator oscillators, and good correlation between theory and measured data has been achieved. The observations are general and applicable to all oscillators with GaAs FETs as active devices.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- December 1987
- DOI:
- 10.1109/TMTT.1987.1133856
- Bibcode:
- 1987ITMTT..35.1328H
- Keywords:
-
- Field Effect Transistors;
- Frequency Shift;
- Frequency Stability;
- Gallium Arsenides;
- Microwave Oscillators;
- Resonators;
- Capacitance;
- Dielectrics;
- Electromagnetic Scattering;
- Microstrip Transmission Lines;
- Electronics and Electrical Engineering