High-field transport in InGaAs/InAlAs modulation-doped heterostructures
Abstract
The velocity-field and mobility-field characteristics of normal and inverted InGaAs/InAlAs modulation-doped heterostructures grown by molecular-beam epitaxy have been measured at 300 and 77 K. Velocities of 3.0 x 10 to the 7th cm/s have been measured in the normal and inverted structures, respectively, at 77 K. Current instabilities are observed at the corresponding field values. Hall mobilities decrease with field beyond 500 V/cm, principally due to phonon scattering. The mobilities in normal and inverted heterostructures attain similar values at fields higher than 1 kV/cm, irrespective of the low-field values.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1987
- Bibcode:
- 1987ITED...34.1491H
- Keywords:
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- Aluminum Gallium Arsenides;
- Electron Mobility;
- Heterojunctions;
- Indium Arsenides;
- Modulation Doping;
- Velocity Measurement;
- Electric Fields;
- Electron Transfer;
- Energy Gaps (Solid State);
- Hall Effect;
- Molecular Beam Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering