A 90-GHz double-drift IMPATT diode made with Si MBE
Abstract
For the first time silicon double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy. The n-type layers are grown at 750 C on low-resistivity n(+)-type substrates followed by p-type layers at 650 C. The highly doped p(+) layers are grown by solid-phase epitaxy in the MBE system. Device design is made for CW operation in W-band. The material is investigated by inspection of beveled samples, defect etching, TEM, SIMS, and spreading resistance measurements. Double-drift flat-profile diodes are housed and mounted employing a technological procedure approved for single-drift diodes. For initial device characterization, dc measurements are performed. Information about doping profile, series, and thermal resistances is obtained. Preliminary RF measurements delivered a maximum output power of 600 mW at 94 GHz with 6.7 percent efficiency from an unoptimized structure.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1987
- DOI:
- 10.1109/T-ED.1987.23049
- Bibcode:
- 1987ITED...34.1084L
- Keywords:
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- Avalanche Diodes;
- Doped Crystals;
- Molecular Beam Epitaxy;
- N-Type Semiconductors;
- P-N Junctions;
- Spectrum Analysis;
- Capacitance-Voltage Characteristics;
- Mass Spectroscopy;
- Microwave Equipment;
- Millimeter Waves;
- Electronics and Electrical Engineering