Heterostructure semiconductor Raman laser

This paper describes the first lasing experiment involving a heterostructure semiconductor Raman laser with a GaP Raman active layer as thin as 15 microns and Al(x)Ga(1-x)P cladding layers for optical confinement, which should be a step towards realizing a semiconductor Raman laser pumped by a semiconductor injection laser applicable to wideband optical communication. Also, a four-layer stucture Raman laser is reported, which makes it possible to reduce the strain-induced optical anisotropy caused by a lattice mismatch.