On 1/f noise characteristics for 0.1 eV HgCdTe photoconductors
Abstract
Sensitivities on 0.1 eV HgCdTe photoconductors with new electrode configuration and in different sizes were measured at 77K and under 1014phcm‑2s‑1 photon background conditions. After data for responsivity, generation-recombination noise (g-r noise) and minority carrier lifetime were reproduced by solving a one dimensional diffusion equation on excess minority carrier, discussions on 1/f noise were made and the following characteristics were concluded: (1) 1/f noise does not originate near electrodes for bias current. (2) 1/f noise hardly depends on sensor size and temperature in the 77–95K range, while g-r noise does. (3) 1/f noise is proportional to bias electric field, i.e. current density. (4) 1/f noise does not depend on photon background. From characteristics (2) and (4), it was concluded that 1/f noise has nothing to do with g-r noise. Finally, a new empirical formula was proposed for 1/f noise.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- February 1987
- DOI:
- 10.1007/BF01012550
- Bibcode:
- 1987IJIMW...8..133O
- Keywords:
-
- Electromagnetic Noise;
- Mercury Cadmium Tellurides;
- Photoconductors;
- Semiconductor Devices;
- Electric Fields;
- Minority Carriers;
- N-Type Semiconductors;
- Photons;
- Solid Electrodes;
- Solid-State Physics;
- Diffusion Equation;
- Empirical Formula;
- Background Condition;
- Minority Carrier;
- Bias Current