Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography Miyake, M. ; Kobayashi, T. ; Deguchi, K. ; Kimizuka, M. ; Horiguchi, S. ; Kiuchi, K. Abstract Publication: IEEE Electron Device Letters Pub Date: June 1987 DOI: 10.1109/EDL.1987.26625 Bibcode: 1987IEDL....8..266M