A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits
Abstract
A GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) is developed which also functions as a transverse-injection laser. The epitaxial layers for the DHBTs are grown by metalorganic vapor phase epitaxy. Experimentation reveals a transistor current gain of about 10 and a pulsed lasing threshold of 230 mA at room temperature.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1987
- DOI:
- 10.1109/EDL.1987.26533
- Bibcode:
- 1987IEDL....8...10H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Heterojunction Devices;
- Injection Lasers;
- Integrated Optics;
- Optoelectronic Devices;
- Gallium Arsenides;
- Lasing;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering