Effect of processing parameters on Ar(+) laser-recrystallized poly-Si/SiO2 interface characteristics
Abstract
The effect of the power of Ar(+) laser irradiation and substrate temperature on the characteristics at the interface between recrystallized poly-Si film and the deposited SiO2 film has been investigated. The density of the oxide-fixed charge and the density of interface traps have been measured by the C-V technique both under high frequency and quasi-static conditions. The TEM technique in both the plane and cross section has been used to study the structure properties of recrystallized poly-Si films. It has been found that the power range of 6.0 W-6.2 W is a power window when the substrate temperature is kept at 320 C and 420 C.
- Publication:
-
Chinese Journal of Semiconductors
- Pub Date:
- September 1987
- Bibcode:
- 1987ChJS....7..612H
- Keywords:
-
- Laser Applications;
- Polycrystals;
- Recrystallization;
- Silicon;
- Silicon Dioxide;
- Solid-Solid Interfaces;
- Argon Lasers;
- Capacitance-Voltage Characteristics;
- Crystal Structure;
- Soi (Semiconductors);
- Thin Films;
- Traps;
- Solid-State Physics