Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature
Abstract
Ultrathin films (≲50 monolayers) of Co have been deposited on atomically clean 7×7 Si(111) surfaces at room temperature and characterized by in situ surface techniques such as Auger electron spectroscopy and low-energy electron diffraction. Formation of a boundary CoSi2-like phase is surprisingly found at a very low coverage range (≲4 monolayers) as evidenced by low-temperature transport measurements (resistivity and Hall effect) and also by cross-sectional high-resolution transmission electron microscopy.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 1987
- DOI:
- 10.1063/1.98653
- Bibcode:
- 1987ApPhL..51.1448V
- Keywords:
-
- Cobalt Compounds;
- Disilicides;
- Electrical Properties;
- Epitaxy;
- Thin Films;
- Electron Spectroscopy;
- Room Temperature;
- Solid-Solid Interfaces;
- Transport Properties;
- Solid-State Physics