Resonant level lifetime in GaAs/AlGaAs double-barrier structures
Abstract
The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 1987
- DOI:
- 10.1063/1.98749
- Bibcode:
- 1987ApPhL..51.1089B
- Keywords:
-
- Aluminum Gallium Arsenides;
- Barrier Layers;
- Gallium Arsenides;
- Negative Resistance Devices;
- Response Time (Computers);
- Schroedinger Equation;
- High Frequencies;
- Numerical Analysis;
- Quantum Mechanics;
- Resonant Frequencies;
- Wave Functions;
- Solid-State Physics