Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs
Abstract
After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon-induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 1987
- DOI:
- 10.1063/1.97736
- Bibcode:
- 1987ApPhL..50.1751F
- Keywords:
-
- Crystal Defects;
- Electron States;
- Gallium Arsenides;
- Infrared Absorption;
- Photon-Electron Interaction;
- Quenching (Atomic Physics);
- Black Body Radiation;
- Electron Transitions;
- Photoconductivity;
- Photoluminescence;
- Solid-State Physics