Epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing
Abstract
We have performed a quantitative analysis of epitaxial quality and arsenic diffusion in ion implanted polycrystalline silicon (polysilicon) layers on <100> Si, and find a clear advantage for the use of high-temperature rapid thermal annealing (RTA) in the 10-s regime to induce intentional, complete epitaxial alignment. The RTA-induced alignment kinetics and associated arsenic diffusion were studied in the 1050-1150 °C temperature range for arsenic doping concentrations between 1×1020 and 1×1021 cm-3, and were characterized by Rutherford backscattering, ion channeling, and cross-sectional transmission electron microscopy. The information about the relationship between arsenic diffusion, arsenic concentration, and epitaxial quality resulting from a given RTA cycle will be useful for optimizing bipolar transistors with realigned polysilicon emitter contacts.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1987
- DOI:
- 10.1063/1.98034
- Bibcode:
- 1987ApPhL..50..751H
- Keywords:
-
- Annealing;
- Epitaxy;
- Ion Implantation;
- Polycrystals;
- Semiconducting Films;
- Silicon Films;
- Arsenic;
- Doped Crystals;
- Particle Diffusion;
- Substrates;
- Vapor Deposition;
- Solid-State Physics