Studies of electrical activation and impurity migration in ion implanted indium phosphide

Studies have been conducted on semi-insulation stability and implant activation during both furnace and rapid thermal annealing. Various encapsulants have been used and phosphorus has been co-implanted to overcome unequal recoil of the indium and phosphorus. The surface morphology is maintained after furnace annealing to 750 deg by both phosphorus silicon glass and silicon nitride and photoluminescence indicates few As or Fa vacancies. Rapid thermal annealing suppresses phosphorus vacancy formation and prevents the occurrence of any n-type surface conductivity.