Amphoteric impurities in gallium arsenide
Abstract
Low temperature photoluminescence spectroscopy has been applied to the study of high purity GaAs grown by liquid phase epitaxial, hydride vapor phase epitaxial, metalorganic chemical vapor deposition and molecular beam epitaxial growth techniques. This analytical technique has been used in combination with the analysis of variable temperature Hall effect data to quantitatively analyze the acceptor species present in high purity epitaxial GaAs. The incorporation of the amphoteric column IV elements has been studied for different growth conditions in each of the epitaxial growth techniques.
- Publication:
-
Annual Technical Report
- Pub Date:
- July 1986
- Bibcode:
- 1986uill.rept.....S
- Keywords:
-
- Chemical Properties;
- Gallium Arsenides;
- Impurities;
- Liquid Phase Epitaxy;
- Semiconductors (Materials);
- Hall Effect;
- Indium Phosphides;
- Photoluminescence;
- Spectroscopy;
- Vapor Deposition;
- Vapor Phases;
- Solid-State Physics