A new ion implant monitor electrical test structure

In this paper, a new Ion Implant Monitor test structure and measurement method is reported. A direct measurement of the sheet resistance of the implanted species is employed. This monitor has the advantage of unambiguous verification of the electrical performance of the layer. The proposed method has a high spatial resolution approximately 300 micrometer between measurements and has been shown to have resolution down to at least 7 x 10 to the 11th power/sq cm. The technique does not suffer from the problem of compensation for non-infinite planes associated with wafer edges as in four point probe measurements. Voltage measurements are directly converted to sheet resistance, thus measurements may be performed rapidly.