Optimisation of SPRITE detectors in anamorphic imaging systems
Abstract
An analysis of SPRITE device S/N ratio is presented that addresses the effect of the increasing majority carrier density along the filament which is generated by the integration of the background flux; the neglect of this effect leads to an assumption of constant recombination probability for excess carriers, the electric field, and the ambipolar velocity. Attention is given to the significant benefits in detectivity obtainable through correct choice of device geometry for the lower carrier density CdHgTe materials currently becoming available. Anamorphic optics can increase the achievable detectivity, in addition to improving the modulation transfer function.
- Publication:
-
Advanced Infrared Detectors and Systems
- Pub Date:
- 1986
- Bibcode:
- 1986aids.conf...18C
- Keywords:
-
- Carrier Density (Solid State);
- Infrared Detectors;
- Infrared Imagery;
- Optimization;
- Carrier Lifetime;
- Mercury Cadmium Tellurides;
- Recombination Reactions;
- Signal To Noise Ratios;
- Instrumentation and Photography