Photoresistive effect in n-GaAs/Au tunnel junctions during plasma reflection of laser light
Abstract
The paper reports the observation of a fast-rising photoresistive effect in n-GaAs/Au tunnel junctions during the application of a laser pulse in the region of plasma reflection from free carriers in n-GaAs. For the present measurements, a pulsed submillimeter NH3 laser, optically pumped by a CO2 laser, is used. It is concluded that, under plasma-reflection conditions, a new photoresponse mechanism of tunneled structures with a Schottky barrier operates. This new mechanism involves a redistribution of charge in the depletion layer as a result of the irradiation.
- Publication:
-
ZhETF Pisma Redaktsiiu
- Pub Date:
- September 1986
- Bibcode:
- 1986ZhPmR..44..234G
- Keywords:
-
- Electron Tunneling;
- Gallium Arsenides;
- Gold;
- Laser Beams;
- Photoconductivity;
- Pulsed Lasers;
- Schottky Diodes;
- Semiconductor Junctions;
- Carbon Dioxide Lasers;
- Gas Lasers;
- N-Type Semiconductors;
- Electronics and Electrical Engineering