Measurement techniques for evaluation of a-Si:H solar cells
Abstract
Analytical techniques which use I-V data on solar cells to characterize the performance of the cells are reviewed, with emphasis on a-Si:H p-i-n cells with a glass/conducting tin oxide (CTO)/p-i-n/metal structure. Quantum efficiency measurements identify the number of photogenerated electrons delivered to an external load for each photon striking the cell. The dark I-V quantifies the proportion of electrical energy generated by the cell when exposed to light which will be available at the output terminal. The series resistance of cells, and thereby the efficiency of the system, is calculated in terms of the resistances of the undepleted part of the insulator, of the CTO, between the CTO and the p-layer, and between the n-layer and the metal.
- Publication:
-
Solar Cells
- Pub Date:
- October 1986
- Bibcode:
- 1986SoCe...18..289B
- Keywords:
-
- Amorphous Silicon;
- Performance Tests;
- Solar Cells;
- Hydrogen;
- Illumination;
- P-I-N Junctions;
- Quantum Efficiency;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering