An isolated Al-poly Si-( p)Si-( n+)Si switching device

A new MISS switching device structure was designed and fabricated, which consists of Al/poly Si/ p/ n⁺/ p-Si layers and is isolated by diffusing n-well to the buried n⁺ layer. The switching voltage increases with increasing junction area of the poly-Si junction and the n⁺p junction, due to surface recombination current in the emitter-base junction, respectively. The holding voltage is kept nearly constant of 0.9 V for the 886 Å poly Si devices.