Electronic Raman scattering from carbon acceptors in undoped GaAs-Al 1-xGa xAs multiple quantum wells
Abstract
Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al 1-xGa xAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ 6 (heavy hole) ground state to Γ 6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.
- Publication:
-
Solid State Communications
- Pub Date:
- August 1986
- DOI:
- 10.1016/0038-1098(86)90053-0
- Bibcode:
- 1986SSCom..59..537T