Hydrogenated Amorphous Silicon And Microcrystalline Silicon For The Emitter Of Silicon Bipolar Transistors
Abstract
A silicon bipolar transistor which uses phosphorus doped hydrogenated amorphous silicon deposited by means of the glow discharge technique as a material for the emitter is presented. The advantage of using such material is that its energy band-gap is wider than that of single crystal silicon. Therefore, a barrier for hole injection into the emitter is created at the emitter-base heterojunction, resulting in a higher emitter efficiency. A maximum current gain of 14 at a base Gummel number of 1.35 x 1013 cm-4s is obtained, this value represents a 5-6 fold improvement over a conventional homojunction transistor with an indentical base region.
- Publication:
-
Amorphous semiconductors for microelectronics
- Pub Date:
- March 1986
- DOI:
- 10.1117/12.961071
- Bibcode:
- 1986SPIE..617...44G
- Keywords:
-
- Amorphous Silicon;
- Bipolar Transistors;
- Microcrystals;
- Additives;
- Heterojunction Devices;
- Hydrogenation;
- N-P-N Junctions;
- Solid-Solid Interfaces;
- Electronics and Electrical Engineering