Lack of correspondence of lattice periods and intensity of photoluminescence in GInSbAs/GaSb heterocompositions

The influence of lattice discrepancy of luminescence efficiency in G a sub (1-x)I n sub (x)S b sub (1-y)A s usb y/GaSb heterocompositions is investigated. Photoluminescence was investigated by using a specimen with a specimen with a heteroepitaxial layer 1.5 micro m thick that passed only a small amount of the driving radiation to the substrate. It is found that the absence of dislocations is not enough to obtain efficient luminescence in compositions with a comparatively wide range of pseudomorphic growth, which significantly narrows the possibility of reducing the level of residual elastic stresses in heterocompositions intended for use in radiating devices.