Relativistic correction of the Hooge parameter for Umklapp {1}/{⨍} noise
Abstract
If the {1}/{⨍} noise in semiconductors is describable by the Umklapp {1}/{⨍} noise process, a relativistic correction of the Hooge parameter is needed when the effective mass of the carriers is very small. This should apply to Hg 1- xCd xTe resistors with x = 0.20 and low temperature when Umklapp {1}/{⨍} noise is the predominant {1}/{⨍} noise source.
- Publication:
-
Physica B+C
- Pub Date:
- July 1986
- DOI:
- 10.1016/0378-4363(86)90267-6
- Bibcode:
- 1986PhyBC.141..145H