Nonequilibrium electron-hole plasma in GaAs quantum wells
Abstract
We demonstrate the existence of nonequilibrium between electrons and holes in the semiconductor GaAs under the influence of high electric fields. Hot-electron distributions in the presence of a cool majority hole plasma are observed. The measurement of the electron-energy-loss rate under these conditions allows the first experimental determination of the energy transfer by electron-hole Coulomb scattering in a semiconductor.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 1986
- DOI:
- Bibcode:
- 1986PhRvL..56..765H
- Keywords:
-
- Electron Plasma;
- Energy Transfer;
- Gallium Arsenides;
- Nonequilibrium Plasmas;
- Quantum Wells;
- Semiconductor Plasmas;
- Carrier Injection;
- Electric Fields;
- Electron Scattering;
- Holes (Electron Deficiencies);
- Maxwell-Boltzmann Density Function;
- Plasma Density;
- Solid-State Physics;
- 72.20.Ht;
- 72.10.-d;
- 73.60.Fw;
- High-field and nonlinear effects;
- Theory of electronic transport;
- scattering mechanisms