Hyperfine studies of dangling bonds in amorphous silicon
Abstract
Dangling-bond electron-spin hyperfine spectra have been measured in 29dilute and 29enriched a-Si:H. From the data we deduce that the electron wave function is largely p-like and has 50-80 % of its density on the central atom with the remainder predominantly on at least one of the back-bonded neighbors. A significant degree of weak back bonding for most dangling-bond sites is invoked to explain the large hyperfine coupling to a back-atom nucleus. Hydrogen back bonding at the dangling-bond site is shown to be negligible.
- Publication:
-
Physical Review B
- Pub Date:
- March 1986
- DOI:
- 10.1103/PhysRevB.33.3006
- Bibcode:
- 1986PhRvB..33.3006B
- Keywords:
-
- 61.16.Hn;
- 71.55.Fr