Localization and scaling in the quantum Hall regime
Abstract
A new experimental study of the quantum Hall effect is presented. Detailed measurements are made of the temperature and magnetic field dependences in the electronic transport coefficients, σxx and σxy, in InxGa1-xAs-InP heterostructures for the n=0 and 1 Landau levels. The results are studied in the context of the (two-parameter) renormalization-group theory of the integral quantum Hall effect.
- Publication:
-
Physical Review B
- Pub Date:
- January 1986
- DOI:
- 10.1103/PhysRevB.33.1488
- Bibcode:
- 1986PhRvB..33.1488W
- Keywords:
-
- 72.20.My;
- 72.80.Ey;
- 73.40.Lq;
- Galvanomagnetic and other magnetotransport effects;
- III-V and II-VI semiconductors;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions