Application of Functional Integrals to the Study of Sundry Electronic Properties of Disordered Systems in the Strongly Localized Regime
Abstract
We find the density of electronic energy levels in the low energy limit for ddimensional disordered systems which consist of randomly distributed scattering centers with repulsive long range and with attractive scatterers. In addition we derive, in a very general context, the Mott result for low frequency a.c. conductivity, (sigma)((omega)), in disordered systems whose Fermi energy, (mu), is far below the mobility edge. If the frequency, (omega), is much less than (mu) then (sigma)((omega)) = A (omega)('2)(Ln c/(omega))('d+1) where A and c have been determined.
 Publication:

Ph.D. Thesis
 Pub Date:
 1986
 Bibcode:
 1986PhDT........34W
 Keywords:

 DENSITY OF STATES;
 INSULATING PHASE;
 AC CONDUCTIVITY;
 INSTATANS;
 Physics: Condensed Matter