Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD

A novel laser-induced CVD apparatus with a direct pattern writing ability by a pyrolytic decomposition of SiH₄ has been developed. With this equipment, a CW argon laser with an output power of 20 W was used. The argon laser beam, which provides localized heating of the substrate, was utilized to decompose gas-phase molecules, resulting in film deposition. By using this equipment, direct pattern writing of polycrystalline silicon with a smooth surface on silicon substrate covered with SiO₂ layer has been realized with a high deposition rate as well as good controllability and crystallinity.