Proposal of and Numerical Simulation of Hg1-xCdxTe Heterojunction Bipolar Transistors
Abstract
A novel heterojunction bipolar transistor (HBT) made from Hg1-xCdxTe is proposed. This narrow-gap material permits an HBT very low voltage operation at low temperature, which in turn gives very high speed switching and extremely low power consumption. A numerical 1-dimensional analysis of a typical HBT structure indicates that it can develop a strong nonlinearity at a small voltage and that a cutoff frequency of 200 GHz is attainable. The estimated power consumption of an (HgCd)Te ECL gate is several times smaller and the power-delay product is one order of magnitude smaller than that of an Si or an (AlGa)As ECL gate.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- March 1986
- DOI:
- 10.1143/JJAP.25.444
- Bibcode:
- 1986JaJAP..25..444S
- Keywords:
-
- Bipolar Transistors;
- Digital Simulation;
- Heterojunctions;
- Mercury Cadmium Tellurides;
- Very Large Scale Integration;
- Volt-Ampere Characteristics;
- Energy Gaps (Solid State);
- Maxwell-Boltzmann Density Function;
- Electronics and Electrical Engineering