Oscillator strength, lifetime and degeneracy of resonantly excited bound excitons in GaAs
Abstract
We report measurements of the radiative lifetime and optical absorption of resonantly excited bound excitons in gallium arsenide at low temperature. We find that the lifetime of the acceptor bound exciton and the absorption cross section of the donor bound exciton are in good agreement with the theoretically predicted values, but that the lifetime of the donor bound exciton is longer than expected by a factor of about 20. This discrepancy is attributed to the existence of a much larger number of low-lying rotational states of the donor bound exciton than had previously been suspected.
- Publication:
-
Journal of Luminescence
- Pub Date:
- January 1986
- DOI:
- 10.1016/0022-2313(86)90015-3
- Bibcode:
- 1986JLum...35..235F