Preparation of oriented, detachable, CdTe thin films
Abstract
The ENSH method (Epitaxial Nucleation in Submicroscopic Holes) is suitable to prepare a number of detachable oriented CdTe films of good crystalline quality with one bulk single crystal. It has been combined with the CSVD (Close-Spaced Vapour Deposition) to give detachable oriented films in a few minutes. The X-ray diffractograms given by reflection on such films are made of narrow peaks (i.e. Full Width at Half Maximum for the (111) peak ≊ 8' in 2θ scale).
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- November 1986
- DOI:
- 10.1016/0022-0248(86)90057-6
- Bibcode:
- 1986JCrGr..78..227G
- Keywords:
-
- Cadmium Tellurides;
- Semiconducting Films;
- Single Crystals;
- Thin Films;
- Vapor Deposition;
- X Ray Diffraction;
- Crystallography;
- Far Infrared Radiation;
- Infrared Spectra;
- Liquid Phase Epitaxy;
- Organometallic Compounds;
- Photoluminescence;
- Solid-State Physics