Characteristics of light amplifier of AlGaAs semiconductor diode laser
Abstract
Experimental and analytical studies of the light amplification of the Fabry-Perot type lasers are reported. For bias current levels of the laser amplifier higher than 90 percent of the threshold current, the waveform distortion of the amplified output becomes apparent. Considering the facts that the time division spectra of the input pulse to the amplifier changes from shorter to longer wavelengths, due to temperature increase in the active layer after the pulse current is turned on, and that the peaks of the amplification factors of the Fabry-Perot type amplifiers depend on the wavelength for the different bias current level, it can be shown that the waveform distortion is caused by the peaks of the spectrum shift of the input and the amplifier. It was also observed that the effective bias current to the amplifier is not the same as the actual bias current, causing the wavelength shift of the peak gain of the amplifier. Taking into account these facts, the analytical and experimental results are in good agreement with each other.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- July 1986
- Bibcode:
- 1986JAP....58...88K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Light Amplifiers;
- Semiconductor Diodes;
- Carrier Density (Solid State);
- Laser Outputs;
- Waveforms;
- Wavelengths;
- Lasers and Masers